parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 7.0 i d @ t a = 70c continuous drain current, v gs @ 4.5v 5.5 a i dm pulsed drain current ? 28 p d @t a = 25c power dissipation ? 2.0 p d @t a = 70c power dissipation ? 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 7/17/01 absolute maximum ratings w www.irf.com 1 IRF7331 hexfet ? power mosfet pd - 94225 v dss r ds(on) max (m w) w) w) w) w) i d 20v 30@v gs = 4.5v 7.0a 45@v gs = 2.5v 5.6a so-8 these n-channel hexfet power mosfet s from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering techniques. description l ultra low on-resistance l dual n-channel mosfet l surface mount l available in tape & reel d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 62.5 c/w thermal resistance
IRF7331 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 2.0a, v gs = 0v ? t rr reverse recovery time CCC 31 47 ns t j = 25c, i f = 2.0a q rr reverse recovery charge CCC 15 23 nc di/dt = 100a/s ? source-drain ratings and characteristics a 28 CCC CCC CCC 2.0 CCC ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. ? surface mounted on 1 in square cu board parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.013 CCC v/c reference to 25c, i d = 1ma CCC CCC 30 v gs = 4.5v, i d = 7.0a ? CCC CCC 45 v gs = 2.5v, i d = 5.6a ? v gs(th) gate threshold voltage 0.6 CCC 1.2 v v ds = v gs , i d = 250a g fs forward transconductance 14 CCC CCC s v ds = 10v, i d = 7.0a CCC CCC 1.0 v ds = 16v, v gs = 0v CCC CCC 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC 100 v gs = 12v gate-to-source reverse leakage CCC CCC -100 v gs = -12v q g total gate charge CCC 13 20 i d = 7.0a q gs gate-to-source charge CCC 3.7 CCC nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 2.1 CCC v gs = 4.5v t d(on) turn-on delay time CCC 7.6 CCC v dd = 10v ? t r rise time CCC 22 CCC i d = 1.0a t d(off) turn-off delay time CCC 110 CCC r g = 53 w t f fall time CCC 50 CCC v gs = 4.5v c iss input capacitance CCC 1340 CCC v gs = 0v c oss output capacitance CCC 170 CCC pf v ds = 16v c rss reverse transfer capacitance CCC 120 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns s d g
IRF7331 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 1.5 2.0 2.5 3.0 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 7.0a
IRF7331 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 4 8 12 16 20 0 2 4 6 8 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 7.0a v = 10v ds 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7331 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd
IRF7331 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge v gs d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 4.0 6.0 8.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 0.05 r ds(on) , drain-to -source on resistance ( w ) i d = 7.0a 0 5 10 15 20 25 30 i d , drain current (a) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 r ds (on) , drain-to-source on resistance ( w ) v gs = 4.5v v gs = 2.5v
IRF7331 www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature fig 16. typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 10 20 30 40 50 60 power (w) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs(th) gate threshold voltage (v) i d = 250a
IRF7331 8 www.irf.com so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mol d prot rus ions not t o e xce ed 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s olde ring t o a s ubst rate. mol d prot rus ions not t o e xce ed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
IRF7331 www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction t e r m in a l n u m b e r 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 7/01
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